Our field of research is basically focused to see the spin polarized transport across magnetic metal-semiconductor interface, role of exchange bias phenomenon in FM/AFM or AFM/FM coupled systems. Our research studies include:
(a) Interfacial Nanomagnetism for Spintronics: The research interest in nanomagnetism is motivated by the need for a better understanding of the fundamental principles that govern magnetic behavior, as well as the need for designing new magnetic materials for device application. Magnetic nanoparticles, compared to bulk materials, show unique physical properties such as superparamagnetism or enhanced anisotropy constants. Very little is known about the magnetization distribution within a single particle and magnetic correlations in ordered arrangements of such nanoparticles. The discovery of the giant- and tunnel magnetoresistance (GMR and TMR), i.e. the fact that the transport properties through an interface depend strongly on the magnetic properties of that interface, has revolutionized modern device technology. The quantum mechanical description of transport through an interface allows a detailed understanding of magnetic tunnel junctions used in spin- and magnetoelectronics.
(b) Layered Magnetism with AFM/FM or FM/AFM interface: The exchange coupling across antiferromagnetic (AFM)/ferromagnetic (FM) or FM/AFM interface has been a fascinating topic in the recent past. Such nanostructures provide interesting physics and innovative ideas for a new generation of magnetic storage devices, magnetic field sensors and state of the art 'spintronic' devices. The exchange bias (EB) effect has been generally considered as an interfacial effect, implying that only interfacial spins are responsible for the unidirectional pinning of the magnetization of the FM layer.
(c) Material modifications by swift heavy ion irradiation: Ion irradiation in magnetic thin films has shown interesting and intriguing phenomena like structural evolution etc. Ion irradiation of magnetic bilayers and multilayers has shown to modify the extrinsic magnetic properties, such as magnetic anisotropy, coercivity and magnetic exchange coupling. Ion irradiation is also known to cause interfacial mixing to relax the strain at the interface.
(d) Magnetism in Semiconducting Materials: The semiconducting materials which exhibit both magnetism and semiconducting properties are known as magnetic semiconductors. Since, the traditional electronics is based on control of charge carriers (i.e., n- or p- type), but these magnetic semiconductors could provide a new type of conduction. This will also allow control of quantum spin state (up or down). This would theoretically provide near-total spin polarization, which is an important property for spintronics applications, eg. in spin transistors.

S. No.	Name of the Project	Duration	Source of Funding	Amount of Funding (Rs)
1.	A study on nano granular magnetic phase embedded in semiconductor for Spintronics.	2007- 2010	DST, New Delhi	35.0 lacs

Selected recent publications
Full List of Publications:

1. Synthesis and Characterization of (Single- and Poly-) Crystalline NiO Nanorods by a Simple Chemical Route Neelabh Srivastava and P. C. Srivastava Physica E: Low-dimensional Systems and Nanostructures (In Press)
2. Nano Granular Magnetic Phase by Interfacial Intermixing in Fe50Ni50/Si Bilayer Structure P.C. Srivastava and P.S. Pandey Solid State Communications (Accepted)
3. Irradiation induced modifications in morphology and magnetic property of Mn/Si structure M. K. Srivastava, V. Ganesan, P. C. Srivastava Current Appl. Phys. (In Press)
4. Frequency dependent electrical transport properties of 4,4',4''-tris(N-3-methylphenyl-N-phenylamine)triphenylamine by impedence spectroscopy Gayatri Chauhan, Ritu Srivastava, P. C. Srivastava and M. N. Kamalasanan Synthetic Metals (In Press)
5. X-ray diffraction and photoelectron spectroscopy study of swift heavy ion irradiated Mn/p-Si structure M. K. Srivastava, T. Shripathi, D. M. Phase, P. C. Srivastava Appl. Surf. Sci. 256 (2010) 1664
6. Temperature dependent acoustical characterization of alkaline earth monochalcogenides in B1 and B2 phase R. P. Singh, M. P. Singh, P. C. Srivastava, R. K. Singh Physica B-Cond. Mat. 405 (2010) 77
7. Fabrication of white organic light-emitting diodes by co-doping of emissive layer R. Srivastava, G. Chauhan, K. Saxena, S. S. Bawa, P. C. Srivastava, M. N. Kamalasanan Indian J. of Pure and Appl. Phys. 47 (2009) 19
8. AFM and electronic transport studies of swift heavy ion irradiated Mn/p-Si bilayer structure P. C. Srivastava, M. K. Srivastava, P. S. Pandey Applied Surface Science 254 (2008) 5116
9. Thermally activated field assisted carrier generation and transport in N,N'- di-[(1-napthalenyl)-N,N'-diphenyl ]- (1 , 1' biphenyl)-4, 4'-diamine doped with 2,3,5,6-tetrafluoro-7, 7', 8, 8'-tetracyanoquinodimethane Gayatri Chauhan, Ritu Srivastava, Virendra Kumar Rai, Arunandan Kumar, S. S. Bawa, P. C. Srivastava and M. N. Kamalasanan J. Appl. Phys. 104 (2008) 124509
10. Ion irradiation induced nano granular magnetic Fe5Si3 silicide phase formation in Fe/Si structures J. K. Tripathi, P. C. Srivastava Appl. Surf. Sci. 255 (2008) 2767
11. Ultrasonic attenuation due to phonon-phonon interaction, thermoelastic loss and dislocation damping in transition metal carbides R. K. Singh, R. P. Singh, M. P. Singh, P. C. Srivastava J. Phys.-Conds. Mat. 20 (2008) 345227
12. Magnetic behavior of nanogranular silicide phase (formed due to swift heavyFe7+ ion irradiation- induced intermixing) P.C. Srivastava and J.K. Tripathi NANO: Brief Reports and Reviews 2(2007) 129
13. A study on swift (~100MeV)heavy ion irradiated Ni films on Si substrates J. K. Tripathi, P.S.Pandey, P.C.Srivastava Nucl. Instr. Meth. B 262 (2007) 51
14. Effect of Swift ( ~ 100 MeV ) Heavy Ion Irradiation on Surface Morphology and Electronic Transport in Fe Film on Si Substrate J. K. Tripathi and P. C. Srivastava Appl. Surf. Sci. 253(2007) 8689
15. Giant magnetoresistance (GMR) in swift heavy ion irradiated Fe films on c-silicon (Fe/c-Si) P. C. Srivastava and J. K. Tripathi J. Phys. D: Appl. Phys. 39 (2006) 1465
16. A study on swift (~100 MeV ) heavy (Si8+) ion irradiated crystalline Si-solar cell P.C. Srivastava, S.P. Pandey , K. Asokan Nuclear Instruments and Methods in Physics Research B 244 (2006) 166
17. Surface modification by swift (~100 MeV) Si7+ and Au7+ ions irradiation in n-GaAs O.P. Sinha , V. Ganesan , P.C. Srivastava Nuclear Instruments and Methods in Physics Research B 244 (2006) 149
18. Magnetic and semiconducting nanostructures by swift heavy ion irradiation of Fe20Ni80 films on Si substrates P.C. Srivastava , J.K. Tripathi and P.S. Pandey Semicond. Sci. Technol. 20 (2005) L61
19. Electronic flow across swift (~100MeV)heavy ion irradiated Fe/Si interfaces P.C. Srivastava , P.S. Pandey , J.K. Tripathi Semicond. Sci. Technol. 19 ( 2004 ) L17-L21
20. Microcracks in ~ 100 MeV Si7+ Ion - Irradiated p- Silicon Surfaces O.P. Sinha and P.C. Srivastava Surface Review and Letters, Vol. 11 No. 3 (2004) 1-5
21. Evidence of plastic flow and recrystallization phenomena in swift (~100 MeV) Si7+ ion irradiated silicon P.C. Srivastava , V. Ganesan , O.P. Sinha Nuclear Instruments and Methods in Physics Research B 222 (2004) 491
22. Electrical and XPS studies of 100 MeV Si7+ ion irradiated Pd/n-GaAs devices O.P. Sinha , T. Shripathi, N.P. Lalla and P.C. Srivastava Applied Surface Science 230 (2004) 222
23. AFM Studies of Swift Heavy Ion -Irradiated Surface modification in Si and GaAs P.C. Srivastava ,V. Ganesan, O.P. Sinha Radiation Measutrements 36 (2003) 671-674
24. In Situ I-V study of swift (~100 MeV ) O6+ ion - irradiated Pd/n-Si devices P.C. Srivastava , O.P. Sinha, J.K. Tripathi and D. Kabiraj Semicond.Sci.Technol. 17 (2002) L44-L46
25. AFM Study of Swift Gold Ion Irradiated Silicon P.C. Srivastava, V. Ganesan and O.P. Sinha Nuclear Inst. & Method in Physics Research B 187 (2002) 220
26. High energy Heavy Ion Irradiation in Semiconductors P.C. Srivastava , S.P. Pandey, O.P. Sinha, D.K. Avasthi and K. Asokan Nuclear Inst. & Method in Physics Research 156 (1999)105
27. Ion Penetration In Materials By High Energy Irradiation P.C. Srivastava , S.P. Pandey and O.P. Sinha Solid State Ionics: Science and Technology, (1998) 121
28. Hydrogenation studies in p-GaAs U.P. Singh and P.C. Srivastava Semicond. Sci. Technol. 13 (1998) 1219
29. Pd /Si device characteristics on 100MeV gold ions irradiation P.C. Srivastava, S.P. Pandey, D.K. Avasthi and K. Asokan Vacuum 48, 12, (1997) 965
30. Study of hydrogen in hydrogenated Pd/Semiconductor devices by ERDA P.C. Srivastava, U.P. Singh, S.P. Pandey and D.K. Avasthi Vacuum, 47, 12, (1996)1427
31. Physics of semiconductor devices P.C.Srivastava, S. Chandra and U.P.Singh K. Lal (Editor) (1996) 472
32. Hydrogen in Semiconductors P.C.Srivastava, and U.P.Singh (A Review) Bull. Mat. Sci. 19, (1996) 51
33. Donor states in Pd/p-GaAs devices and effect of hydrogenation U.P.Singh, P.C. Srivastava and S.Chandra Semicond. Sci. Technol., 10 (1995) 1368
34. Ion transport studies in PEO:NH4I polymer electrolytes with dispersed Al2O3 A. Chandra, P.C. Srivastava and S.Chandra J. Mater. Sci., 30 (1995) 3633
35. Al/n-Si diodes with low energy (~100 eV) hydrogen ion implantation prior to metallization P.C. Srivastava, C. Coluzza, S. Chandra and U.P. Singh Solid State Electron., 37 (1994) 520
36. PEO based composite polymer electrolyte employing activated and unactivated Al2O3 Amita Chandra ,P.C. Srivastava and S. Chandra Solid State Ionics :Materials and Applications (1992) 397
37. Hydrogen Ion (H+ and H-) in Silicon P.C. Srivastava, U.P. Singh and S. Chandra Solid State Ionics : Materials and Applications, (World Scientific Pub. Co.) (1992) 679
38. Room temperature hydrogenation studies on silicon P.C. Srivastava, D. Trpathi and S.Chandra Proc.conf. on physics & Technology of Semiconductor Devices and Integrated Circuits, IIT Madras , SPIE - Vol.1523 (1992) 321
39. Studies on Hydrogenated Pd /p-type Si diodes. D. Tripathi, P.C. Srivastava and S. Chandra Solid State Electron., 35 (1992) 1185
40. Internally detected electron photo-excitation spectroscopy on heterostructures C. Coluzza, A. Negila, A. Bennouna, M.Cappizzi, R.Carluccio. A Frova and P. C. Srivastava Appl. Surf. Sci., 56 (1992) 733
41. Acceptor states in Pd/n-GaAs devices and effect of hydrogenation P.C. Srivastava, S.Chandra and U.P. Singh Semicond. Sci. Technol., 6 (1991)1126
42. A study of extrinsic interface states at Al/Si interface from C-V characteristics P.C. Srivastava and U.P. Singh Int. J. Electronics, 68 (1990) 69
43. Passivation of shallow donor impurities in hydrogenated Pd/Si Devices D. Tripathi, P.C. Srivastava and S. Chandra Phys. Rev. B, 12 (1989) 420
44. Deep states in hydrogenated Pd/Si devices. P.C. Srivastava, D. Tripathi and S.Chandra Semicond. Sci. Technol. (U.K.), 3 (1988)1022
45. Some studies on Pd-Si Schottky diodes. P.C. Srivastava, Amita Tolpadi and D. Tripathi National Academy of Science Letter, 7 (1984) 379
46. Electrodeposited semiconducting molybdenum selenide film (optical, electrical and photoelectrochemical solar cells studies), S. Chandra , D.P. Singh, P.C. Srivastava and S.N. Sahu J. Phys. D : Appl. Phys. (U.K.) 17 (1984) 2125
47. Electrical defect analysis following pulsed laser irradiation of unimplanted GaAs D. Pribhat, S. Delage, D. Dieumegard, M. Croset, P. C. Srivastava and J. C. Bourgoin Mat. Res. Soc. Symp. Proc. (USA), 13 (1983) 647
48. Transient capacitance measurement on resistive samples Broniatowski, A. Blosse, P.C. Srivastava and J.C. Bourgoin J. Appl. Phys. (USA), 54 (1983) 2907
49. Grain boundary passivation in polycrystalline silicon, a DLTS study, Grain boundaries in semiconductors, MRS (USA) Proc. Eds. H.J. Leamy, G.E. Pike and C.H. Seager P.C. Srivastava and J.C. Bourgoin Elsevier Science Publishing Co. Inc. (New York), (1982) 137
50. Transient capacitance spectroscopy in polycrystalline silicon P.C. Srivastava, J.C. Bourgoin, F. Rabajo and J. Mimilqa Arroyo J. Appl. Phys. (USA), 52, (1982) 8633
51. Electron trapping in neutron-irradiated very thin films of Al2O3 P.C. Srivastava, A.R. Bardhan and D.L.Bhattacharya Int. J. Electronics (U.K.) 46 (1979) 547
52. Electron Transport Mechanism in very thin films of Al2O3 A.R. Bardhan, P.C. Srivastava, A. Chatterjee and D.L. Bhattacharya Inst. J. Electronics (U.K.) 40 (1976) 313
53. Contact potential difference measurement using a single junction breakdown field method A.R. Bardhan, P.C. Srivastava, and D.L.Bhattacharya Thin Solid Films (Switzerland), 28 (1975) 237
54. Electrical breakdown in very thin Al2O3 films A.R. Bardhan, P.C. Srivastava, I.B. Bhattacharya and D.L. Bhattacharya Inst. J. Electronics (U. K.), 39 (1975) 343
55. Negative resistance and bistable switching in very thin Al2O3 film A.R. Bardhan, P.C. Srivastava and D.L.Bhattarcharya Thin Solid Films (Switzerland), 24 (1974) 842
56. Four point probe for studying sandwiched thin films and junctions. P.C. Srivastava, A.R. Bardhan and D.L. Bhattacharya "Research and Industry" (CSIR, India), 17 (1972) 108
    CONFERENCE PAPERS / NATIONAL PROCEEDINGS:
57. Nano Ni2Si Magnetic Particles Due to swift heavy ion irradiation J.K.Tripathi, P.S.Pandey, M.K.Srivastava and P.C.Srivastava Proceed. of DAE Solid State Phys.Symp. 51, 247(2006)
58. Electronic Transport across Swift Heavy Ion Irradiated Magnetic- Metal/Si Interface P.C.Srivastava, J.K.Tripathi and P.S.Pandey Proceed. of DAE Solid State Phys.Symp. 49, 506(2004)
59. Ion Beam Mixing at Fe/Si Interface P.C.Srivastava, P.S.Pandey and J.K.Tripathi Proceed. of DAE Solid State Phys.Symp. 46,407(2003)
60. Electronic Sputtering in Swift Heavy Ion Irradiated Si and GaAs Surfaces National Seminar Cum Workshop on Surface Modification & characterization By Energetic Ion Beams, Jaipur, Nov. 23-24, (2001).
61. Cracks Formation on Silicon Surfaces by Swift Heavy Ion Irradiation National Seminar Cum Workshop on Surface Modification & Characterization by Energetic Ion Beams, Jaipur, Nov. 23-24, (2001).
62. Change of Conductivity type in High Energy Heavy Ion Irradiated Semiconductors National Seminar on Recent trend in Materials Science, S.V. Univ. Tirupati, (1999)
63. Swift heavy ions in crystalline electronic materials NERIEST, Itanagar , (1998)
64. Study of Hydrogen in Hydrogenated Pd/ n-Si Devices by ERDA Techniques using 55 Mev Si- Ions Proc. Solid State Physics Symp. (1995), IACS, Calcutta.
65. Electronic structure of Metal/ Semiconductor interface Proc. Solid State Physics Symp. 368,( 1989)
66. Hydrogenation of Pd/Si diodes Proc. Solid State Physics Symp. Vol. 27C, 191, (1984)
67. Thermal Annealing in ion -implanted Crystalline GaAs Proc. Nucl. Phys. & Solid State Physics 25C. (1982)
68. Electron transport through neutron irradiated In-CdS-In structure Proc. Nucl. Phys. & Solid state Physics 20C, 206, (1977)
69. D.C. Conduction through neutron irradiated Al203 films Proc. Nucl. Phys. & Solid State Physics 17C, 142,(1974)
70. Electrical breakdown and recovery phenomena in thin Al203 films Proc. Nucl. Phys. & Solid state Physics 16C, (1973)